Sliding ferroelectricity in two-dimensional MoA<sub>2</sub>N<sub>4</sub>(A = Si or Ge) bilayers: high polarizations and Moiré potentials
Tingting Zhong, Yangyang Ren, Zhuhua Zhang, Jin-Hua Gao, Menghao Wu
Abstract
Strong sliding-ferroelectricity is predicted in high-mobility semiconducting MoSi 2 N 4 bilayers, and a small angle twist will induce strong Moiré potential and unique band alignment for exciton trapping.
Topics & Concepts
FerroelectricityExcitonMaterials scienceTrappingCondensed matter physicsMoiré patternOptoelectronicsOpticsPhysicsDielectricBiologyEcology2D Materials and ApplicationsElectronic and Structural Properties of OxidesPerovskite Materials and Applications