High PSR output-capacitor-less LDO with double buffers technique
Ruguo Li, Xin Zhang, Yanhan Zeng, Yihan Lin, Jingci Yang, Hong‐Zhou Tan
Abstract
An output-capacitorless LDO regulator with double buffers technique has been proposed and simulated in a commercial 0.18μm CMOS process in this paper. To get over the tradeoff between PSR against other important design parameters such as loop stability and load capability, the proposed LDO replicates a supply ripple to the gate of pass transistor using a PMOS buffer with diode connected transistor and extends the load range by an NMOS buffer. Simulation results verify that PSR is improved effectively in the whole unity gain frequency (UGF) and the improvement is up to 40dB. In addition, the quiescent current is 33μA, providing a maximum load current of 50 mA. Besides, excellent load regulation of 2μ V/mA and line regulation of 0.06mV/V are obtained with supply from 1.2V to 2V.