Ferroelectric Field-Effect Transistor Synaptic Device With Hafnium-Silicate Interlayer
Sangwoo Kim, Wonjun Shin, Munhyeon Kim, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Changhyeon Han, Soi Jeong, Eun Chan Park, Ji Won You, Hyunwoo Kim, Rino Choi, Daewoong Kwon
Abstract
A ferroelectric field-effect-transistor (FeFET) with hafnium zirconium oxide ferroelectric layer and hafnium silicate (HfSiOx) interlayer (IL) is demonstrated. Compared to a FeFET with SiO2 IL, the proposed FeFET is confirmed to have faster program/erase operations, wider memory window, and the improved endurance/retention characteristics due to the higher dielectric constant of HfSiOx and superior interfacial state between HfxZr(1-x)O2 and IL. The proposed FeFET demonstrates a power spectral density that is approximately two times smaller than that of conventional FeFETs and endurance exceeding 1010 cycles. This underscores its enhanced suitability for neuromorphic computing applications.