Reviewing of Using Wide-bandgap Power Semiconductor Devices in Electric Vehicle Systems: from Component to System
Thang Van Do, Ke Li, João Pedro F. Trovão, Loïc Boulon
Abstract
The application of wide-bandgap (WBG) power semiconductor devices (silicon carbide and gallium nitride) in EV power electronics systems has a huge potential to increase EV efficiency, reliability and mileage. However, they extend cutting-edge research where both opportunities and challenge exist. In order to look for different approaches to address the research challenge, WBG power semiconductor devices and their application in electrical vehicle systems is reviewed in this paper, which will eventually benefit designers to choose appropriate devices and methodologies to improve EV power electronics systems performance.
Topics & Concepts
Gallium nitrideSilicon carbideWide-bandgap semiconductorPower semiconductor devicePower electronicsReliability (semiconductor)ElectronicsSemiconductorPower moduleSemiconductor devicePower (physics)Component (thermodynamics)Enhanced Data Rates for GSM EvolutionMaterials scienceElectrical engineeringEngineering physicsComputer scienceEngineeringOptoelectronicsNanotechnologyTelecommunicationsVoltagePhysicsQuantum mechanicsLayer (electronics)ThermodynamicsMetallurgySilicon Carbide Semiconductor TechnologiesAdvanced DC-DC ConvertersElectromagnetic Compatibility and Noise Suppression