28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
Sourav De, Yannick Raffel, Sunanda Thunder, Franz Müller, Maximilian Lederer, Thomas Kaempfe, Masud S K Rana, Luca Pirro, Konrad Seidel, Bhaswar Chakrabarti
Abstract
This paper presents 28 nm high-k-metal gate (HKMG) based ferroelectric field effect transistor (FeFET) devices fabricated on 300mm wafers at GlobalFoundries’. The fabricated devices demonstrate 103 WRITE-endurance cycles and 104 seconds of data-retention capability at 85°C.
Topics & Concepts
Metal gateFerroelectricityMaterials scienceOptoelectronicsWaferTransistorField-effect transistorMetalElectrical engineeringNanotechnologyEngineeringGate oxideVoltageMetallurgyDielectricFerroelectric and Negative Capacitance DevicesAdvancements in Semiconductor Devices and Circuit Design