Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
Joachim Piprek
Abstract
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing various applications in lighting, displays, biotechnology, and other fields. However, their energy efficiency is still below expectations in many cases. An unprecedented diversity of theoretical models has been developed for efficiency analysis and GaN-LED design optimization, including carrier transport models, quantum well recombination models, and light extraction models. This invited review paper provides an overview of the modeling landscape and pays special attention to the influence of III-nitride material properties. It thereby identifies some key challenges and directions for future improvements.
Topics & Concepts
Light-emitting diodeGallium nitrideOptoelectronicsDiodeMaterials scienceNitrideEfficient energy useEngineering physicsWide-bandgap semiconductorComputer scienceNanotechnologyEngineeringElectrical engineeringLayer (electronics)GaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials