Continuous Single‐Crystalline GaN Film Grown on WS<sub>2</sub>‐Glass Wafer
Yue Yin, Bingyao Liu, Qi Chen, Zhaolong Chen, Fang Ren, Shuo Zhang, Zhetong Liu, Rong Wang, Meng Liang, Jianchang Yan, Jingyu Sun, Xiaoyan Yi, Tongbo Wei, Junxi Wang, Jinmin Li, Zhongfan Liu, Peng Gao, Zhiqiang Liu
Abstract
Abstract Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the epitaxy of single‐crystalline GaN film on WS 2 ‐glass wafer is successfully performed by using the strong polarity of WS 2 buffer layer and its perfectly matching lattice geometry with GaN. Furthermore, this study reveals that the first interfacial nitrogen layer plays a crucial role in the well‐constructed interface by sharing electrons with both Ga and S atoms, enabling the single‐crystalline stress‐free GaN, as well as a violet light‐emitting diode. This study paves a way for the heterogeneous integration of semiconductors and creates opportunities to break through the design and performance limitations, which are induced by substrate restriction, of the devices.