Crystallization behavior of ion beam sputtered HfO2 thin films and its effect on the laser-induced damage threshold
Z. Balogh, Igor Stevanovic, Aurelio Borzì, Andreas Bächli, Daniel Schachtler, Thomas Gischkat, A. Neels, A. Stuck, Roelene Botha
Abstract
Abstract In this work, we present our results about the thermal crystallization of ion beam sputtered hafnia on 0001 SiO 2 substrates and its effect on the laser-induced damage threshold (LIDT). The crystallization process was studied using in-situ X-ray diffractometry. We determined an activation energy for crystallization of 2.6 ± 0.5 eV. It was found that the growth of the crystallites follows a two-dimensional growth mode. This, in combination with the high activation energy, leads to an apparent layer thickness-dependent crystallization temperature. LIDT measurements @355 nm on thermally treated 3 quarter-wave thick hafnia layers show a decrement of the 0% LIDT for 1 h @773 K treatment. Thermal treatment for 5 h leads to a significant increment of the LIDT values.