Recent progress on heteroepitaxial growth of single crystal diamond films
Vedaste Uwihoreye, Yushuo Hu, Guangyu Cao, Xing Zhang, F. Palacio, Kelvin H. L. Zhang
Abstract
Abstract Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra‐wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large‐size and high‐quality single‐crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single‐crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma‐assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed.