World’s First GAA 3nm Foundry platform Technology (SF3) with Novel Multi-Bridge-Channel-FET (MBCFET™) Process
Jaehun Jeong, Sang Hyeon Lee, S. Masuoka, Shincheol Min, Sanghoon Lee, Seungkwon Kim, Taehun Myung, Byung-Ha Choi, Chang-Woo Sohn, Sung Won Kim, Jeongmin Choi, Jungmin Park, Hyung-Jong Lee, Taeyoung Kim, Seokhoon Kim, Yuri Yasuda-Masuoka, Ja-Hum Ku, Gitae Jeong
Abstract
In this paper, 3nm Gate-All-Around technology (SF3) having more advanced 2 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">nd</sup> generation of Multi-Bridge-Channel FET (MBCFET™) has been demonstrated with additional process optimization from $1 ^{st}$ generation GAA device (SF3E) already in mass production [1]. As a result, SF3 platform successfully has 22% speed, 34% power gain and 0.79x logic area over our previous 4nm FinFET platform [2] with additional design flexibility using various nano-sheet(NS) widths of MBCFET™ device in the same cell type.