Lattice expansion enables interstitial doping to achieve a high average <i>ZT</i> in <i>n</i>‐type PbS
Zhengtao Liu, Tao Hong, Liqing Xu, Sining Wang, Xiang Gao, Cheng Chang, Xiangdong Ding, Yu Xiao, Li‐Dong Zhao
Abstract
Abstract Lead sulfide (PbS) presents large potential in thermoelectric application due to its earth‐abundant S element. However, its inferior average ZT ( ZT ave ) value makes PbS less competitive with its analogs PbTe and PbSe. To promote its thermoelectric performance, this study implements strategies of continuous Se alloying and Cu interstitial doping to synergistically tune thermal and electrical transport properties in n ‐type PbS. First, the lattice parameter of 5.93 Å in PbS is linearly expanded to 6.03 Å in PbS 0.5 Se 0.5 with increasing Se alloying content. This expanded lattice in Se‐alloyed PbS not only intensifies phonon scattering but also facilitates the formation of Cu interstitials. Based on the PbS 0.6 Se 0.4 content with the minimal lattice thermal conductivity, Cu interstitials are introduced to improve the electron density, thus boosting the peak power factor, from 3.88 μW cm −1 K −2 in PbS 0.6 Se 0.4 to 20.58 μW cm −1 K −2 in PbS 0.6 Se 0.4 −1%Cu. Meanwhile, the lattice thermal conductivity in PbS 0.6 Se 0.4 − x %Cu ( x = 0–2) is further suppressed due to the strong strain field caused by Cu interstitials. Finally, with the lowered thermal conductivity and high electrical transport properties, a peak ZT ~1.1 and ZT ave ~0.82 can be achieved in PbS 0.6 Se 0.4 − 1%Cu at 300–773K, which outperforms previously reported n ‐type PbS.