Printable ion-gel-gated In2O3 synaptic transistor array for neuro-inspired memory
Chenxing Jin, Wanrong Liu, Yulong Huang, Yunchao Xu, Yiling Nie, Gengming Zhang, Pei He, Jia Sun, Junliang Yang
Abstract
With the development of neuromorphic electronics, much effort has been devoted to the design and manufacture of synaptic electronic devices with large scale and cost-efficient. In this paper, an In2O3 synaptic transistor array gated by screen-printed ion-gel was demonstrated. Due to the ion-gel/Al2O3 stacked gate dielectric, all devices on the array achieved a large hysteresis window of >1 V, a steep back sweep subthreshold swing of <60 mV/decade, and a nonvolatile memory behavior, showing that the screen-printed ion-gel has satisfactory uniformity in large scale. In addition, short-term to long-term plasticity, paired-pulse facilitation, and spike-rate-dependent plasticity are simulated. Based on the plasticity regulated with the spike frequency, a high-pass filter was realized. Flash memory as a special memory model in the nervous system has been simulated in the array. This study provides a unique platform for designing high-performance, repeatable, and stable artificial synapses for the neuromorphic system.