Properties for Thermally Conductive Interfaces with Wide Band Gap Materials
Samreen Khan, Frank Angeles, John Wright, Saurabh Vishwakarma, V. Ortiz, Erick Guzman, Fariborz Kargar, Alexander A. Balandin, David J. Smith, Debdeep Jena, Huili Grace Xing, Richard B. Wilson
Abstract
depends on interfacial structure, TDTR and TEM measurements were conducted on a series of TiN/AlN samples prepared in different ways. Interfacial disorder at a TiN/AlN interface adds a thermal resistance equivalent to ∼1 nm of amorphous material. Our findings improve fundamental understanding of what material properties are most important for thermally conductive interfaces. They also provide benchmarks for the thermal conductance of interfaces with wide band gap semiconductors.
Topics & Concepts
Materials scienceTinSemiconductorElectrical conductorBand gapWide-bandgap semiconductorNitridePhononConductanceChemical physicsCondensed matter physicsNanotechnologyOptoelectronicsComposite materialLayer (electronics)MetallurgyPhysicsThermal properties of materialsSilicon Carbide Semiconductor TechnologiesAdvancements in Semiconductor Devices and Circuit Design