ZrTe<sub>2</sub> Compound Dirac Semimetal Contacts for High-Performance MoS<sub>2</sub> Transistors
Xiaokun Wen, Wenyu Lei, Xinlu Li, Boyuan Di, Ye Zhou, Jia Zhang, Yuhui Zhang, Liufan Li, Haixin Chang, Wenfeng Zhang
Abstract
Recent investigations reveal elemental semimetal (Bi and Sb) contacts fabricated with conventional deposition processes exhibit a remarkable capacity of approaching the quantum limit in two-dimensional (2D) semiconductor contacts, implying it might be an optimal option to solve the contact issue of 2D semiconductor electronics. Here, we demonstrate novel compound Dirac semimetal ZrTe 2 contacts to MoS 2 constructed by a nondestructive van der Waals (vdW) transfer process, exhibiting excellent ohmic contact characteristics with a negligible Schottky barrier. The band hybridization between ZrTe 2 and MoS 2 was verified. The bilayer MoS 2 transistor with a 250 nm channel length on a 20 nm thick hexagonal boron nitride (h-BN) exhibits an I ON / I OFF current ratio over 10 5 and an on-state current of 259 μA μm –1 . The current results reveal that 2D compound semimetals with vdW contacts can offer a diverse selection of proper semimetals with adjustable work functions for the next-generation 2D-based beyond-silicon electronics.