Altermagnetic Proximity Effect
Ziye Zhu, Richang Huang, Xianzhang Chen, Zhou Cui, Xunkai Duan, Jiayong Zhang, Igor Žutić, Zhou Tong
Abstract
Proximity effects complement conventional materials design by enabling interfacial properties absent in any constituent. Here, we uncover an altermagnetic proximity effect (AMPE), distinct from ferromagnetic and antiferromagnetic proximity, in which the hallmark momentum-alternating spin splitting of an altermagnet is transferred across an interface into an adjacent nonmagnetic layer-a process we term "altermagnetization." Using first-principles calculations and model analysis, we identify the AMPE in heterostructures based on the prototypical van der Waals altermagnet V_{2}Se_{2}O, where a proximitized monolayer PbO acquires altermagnetic band splitting and real-space spin textures, with systematic tunability via interlayer spacing and magnetic configuration. We further demonstrate that the AMPE enables valley-dependent spin splitting in the semiconductor PbS and realizes topological superconductivity in the s-wave superconductor NbSe_{2}, both inheriting the altermagnetic spin texture. Finally, we validate the generality and experimental feasibility of the AMPE by realizing it in a broader class of established altermagnets, including V_{2}Se_{2}O derivatives, Ruddlesden-Popper perovskites, and the metallic CrSb. Our results identify the AMPE as a universal proximity mechanism and a versatile platform for engineering emergent quantum phenomena in heterostructures.