32 × 32 silicon photonic MEMS switch with gap-adjustable directional couplers fabricated in commercial CMOS foundry
Sangyoon Han, Jeremy Béguelin, Lane Ochikubo, J. Jacobs, Tae Joon Seok, Kyoungsik Yu, Niels Quack, Chang‐Kyu Kim, R.S. Muller, Ming C. Wu
Abstract
We report on a 32 × 32 silicon photonic micro-electro-mechanical-system (MEMS) switch with gap-adjustable directional couplers. The switch is fabricated on 200-mm silicon-on-insulator wafers in a commercial complementary metal-oxide-semiconductor (CMOS) foundry. The fabricated device has a maximum on-chip loss of 7.7 dB and an extinction ratio of 50.8 dB. The switching voltage is 9.45 V and the 20-dB bandwidth is 28.7 nm. Our work shows a promising path for mass production of silicon photonic MEMS switches in commercial CMOS foundries.
Topics & Concepts
Materials scienceCMOSMicroelectromechanical systemsSilicon on insulatorExtinction ratioOptoelectronicsWaferSilicon photonicsPhotonicsSiliconFoundryElectrical engineeringEngineeringMetallurgyWavelengthPhotonic and Optical DevicesMechanical and Optical ResonatorsAdvanced MEMS and NEMS Technologies