Synthesis of High‐Performance Monolayer Molybdenum Disulfide at Low Temperature
Ji Hoon Park, Ang‐Yu Lu, Pin‐Chun Shen, Bong Gyu Shin, Haozhe Wang, Nannan Mao, Renjing Xu, Soon Jung Jung, Donhee Ham, Klaus Kern, Yimo Han, Jing Kong
Abstract
Abstract The large‐area synthesis of high‐quality MoS 2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)‐grown MoS 2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high‐quality monolayer MoS 2 with the domain size up to 120 µm by metal‐organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low‐substrate temperature, the MOCVD‐grown MoS 2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm 2 V −1 s −1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS 2 growth process via a geometric model of the MoS 2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.