Structure and electrical properties of Ba<sub>3</sub>TaGa<sub>3</sub>Si<sub>2</sub>O<sub>14</sub> single crystals grown by Czochralski method
Haruki Usui, Hiraku Kusakabe, Makoto Tokuda, Kazumasa Sugiyama, Takuya Hoshina, Takaaki Tsurumi, Hiroaki Takeda
Abstract
Ba3TaGa3Si2O14 (BTGS) bulk single crystals were grown by the Czochralski method. The crystal structure of BTGS has been refined using single-crystal X-ray diffraction data with a precision corresponding to an R index of 0.018. The crystal structure is isostructural to La3Ga5SiO14 which has the trigonal space group P321 and Z = 1, and the distribution of each cation is ordered in each site. Material constants and resistivity of the crystal were measured up to 550 °C. The results indicate that the BTGS crystal is a good candidate for piezoelectric applications in elevated temperatures.
Topics & Concepts
IsostructuralMaterials scienceElectrical resistivity and conductivityCrystallographyCrystal structureCrystal (programming language)Single crystalTrigonal crystal systemCzochralski methodDiffractionMineralogyChemistryPhysicsOpticsComputer scienceQuantum mechanicsProgramming languageAcoustic Wave Resonator TechnologiesUltrasonics and Acoustic Wave PropagationFerroelectric and Piezoelectric Materials