InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer-deposited ZrO <sub>2</sub> as gate dielectric
Peng Cui, Jie Zhang, Meng Jia, Guangyang Lin, Lincheng Wei, Haochen Zhao, Lars Gundlach, Yuping Zeng
Abstract
Abstract In this letter, we present the electrical properties of the InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) with plasma enhanced atomic layer-deposited ZrO 2 as the gate dielectric. The InAlN/GaN MISHEMT with an on/off current ( I on / I off ) ratio of 1.46 × 10 9 as well as a subthreshold swing of 85 mV/dec was achieved. The interface trap density ( D it ) decreased from 1.16 × 10 12 eV −1 cm −2 (at E C − E T = 0.26 eV) to 4.68 × 10 11 eV −1 cm −2 (at E C − E T = 0.40 eV), indicating a good interface property. This study suggests a feasible way for the application of ZrO 2 /InAlN/GaN MISHEMTs.
Topics & Concepts
Materials scienceOptoelectronicsInduced high electron mobility transistorTransistorDielectricInsulator (electricity)SemiconductorLayer (electronics)PlasmaHigh-κ dielectricHigh-electron-mobility transistorMISFETElectron mobilityGate dielectricNanotechnologyField-effect transistorElectrical engineeringPhysicsEngineeringQuantum mechanicsVoltageGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials