Unveiling of interstice-occupying dopant segregation at grain boundaries in perovskite oxide dielectrics for a new class of ceramic capacitors
Ji‐Sang An, Hae-Seung Lee, Pilgyu Byeon, Dongho Kim, Hyung Bin Bae, Si‐Young Choi, Jungho Ryu, Sung‐Yoon Chung
Abstract
We elucidate that the peculiar segregation behavior of indium have a critical contribution to achieving unprecedented dielectric properties for a new class of high-reliability ceramic capacitors.
Topics & Concepts
CapacitorDielectricCeramicMaterials scienceDopantCeramic capacitorGrain boundaryPerovskite (structure)Reliability (semiconductor)IndiumOxideEngineering physicsOptoelectronicsComposite materialElectrical engineeringMetallurgyDopingMicrostructureChemical engineeringPhysicsEngineeringThermodynamicsVoltagePower (physics)Ferroelectric and Piezoelectric MaterialsSemiconductor materials and devicesDielectric properties of ceramics