Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)

Shangyu Yang, Siqi Zhao, Junhong Chen, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Yang Zhang, Xingfang Liu, Guosheng Sun, Yiping Zeng

2023Journal of Crystal Growth18 citationsDOI

Topics & Concepts

EpitaxyTrichlorosilaneAtmospheric temperature rangeMaterials scienceCrystal growthSiliconLayer (electronics)Silicon carbideRange (aeronautics)OptoelectronicsCrystallographyChemistryNanotechnologyComposite materialThermodynamicsPhysicsSilicon Carbide Semiconductor TechnologiesAdvanced ceramic materials synthesisCopper Interconnects and Reliability

Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)

Topics & Concepts

Growth of 4H-SiC epitaxial layers at temperatures below 1500 °C using trichlorosilane (TCS)