Fermi Pressure and Coulomb Repulsion Driven Rapid Hot Plasma Expansion in a van der Waals Heterostructure
Junho Choi, Jacob Embley, Daria D. Blach, Raül Perea‐Causín, Daniel Erkensten, Dong Seob Kim, Long Yuan, Woo Young Yoon, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Emanuel Tutuc, Samuel Brem, Ermin Malić, Xiaoqin Li, Libai Huang
Abstract
Transition metal dichalcogenide heterostructures provide a versatile platform to explore electronic and excitonic phases. As the excitation density exceeds the critical Mott density, interlayer excitons are ionized into an electron–hole plasma phase. The transport of the highly non-equilibrium plasma is relevant for high-power optoelectronic devices but has not been carefully investigated previously. Here, we employ spatially resolved pump–probe microscopy to investigate the spatial-temporal dynamics of interlayer excitons and hot-plasma phase in a MoSe 2 /WSe 2 twisted bilayer. At the excitation density of ∼10 14 cm –2, well exceeding the Mott density, we find a surprisingly rapid initial expansion of hot plasma to a few microns away from the excitation source within ∼0.2 ps. Microscopic theory reveals that this rapid expansion is mainly driven by Fermi pressure and Coulomb repulsion, while the hot carrier effect has only a minor effect in the plasma phase.