Epitaxial GaN using Ga(NMe <sub>2</sub> ) <sub>3</sub> and NH <sub>3</sub> plasma by atomic layer deposition
Polla Rouf, Nathan J. O’Brien, Sydney C. Buttera, Ivan Martinovic, Babak Bakhit, Erik Martinsson, Justinas Pališaitis, Chih‐Wei Hsu, Henrik Pedersen
Abstract
GaN is grown epitaxially on 4H-SiC without buffer layer using ALD with Ga(NMe <sub>2</sub> ) <sub>3</sub> and NH <sub>3</sub> plasma.
Topics & Concepts
Materials scienceEpitaxyAtomic layer depositionLayer (electronics)PlasmaAnalytical Chemistry (journal)Deposition (geology)OptoelectronicsNanotechnologyChemistryPhysicsQuantum mechanicsBiologySedimentChromatographyPaleontologyGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials