Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs
Pengfei Wang, Xun Li, En Xia Zhang, Rong Jiang, Michael W. McCurdy, Brian Poling, Eric R. Heller, Ronald D. Schrimpf, Daniel M. Fleetwood
Abstract
The effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a function of bias and temperature. Positive and negative threshold voltage shifts are observed, depending on stress conditions, indicating the presence of acceptor-like and donor-like traps in these devices. Worst-case transconductance degradation under rated device operating conditions is observed for devices subjected to high-voltage stress in the ON bias condition at elevated temperature. This contrasts with results on earlier-generation devices, which often show worst-case response under semi-ON bias conditions, emphasizing that each technology requires characterization under multiple bias-stress conditions. Neutral and charged oxygen donor-like DX centers and substitutional acceptor-like N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ga</sub> centers are the dominant defects contributing to low-frequency noise in these devices. Dehydrogenation of O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</sub> -H complexes during O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</sub> -bias stress and the resulting increases in densities of O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">N</sub> -related donorlike defects are evidently the reliability-limiting mechanism in these devices.