Band-Order Anomaly at the γ-Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface Drives the Electron-Mobility Boost
Alla Chikina, Dennis Valbjørn Christensen, Vladislav Borisov, Marius Adrian Huşanu, Yunzhong Chen, Xiaoqiang Wang, Thorsten Schmitt, M. Radović, Naoto Nagaosa, А. S. Mishchenko, Roser Valentí, Nini Pryds, Vladimir N. Strocov
Abstract
. Band-order engineering, exploiting the fundamental symmetry properties, emerges as another route to boost the performance of oxide devices.
Topics & Concepts
Perovskite (structure)Electron mobilitySpinelCondensed matter physicsElectronMaterials scienceChemical physicsOxidePhysicsChemistryCrystallographyQuantum mechanicsMetallurgyElectronic and Structural Properties of OxidesMagnetic and transport properties of perovskites and related materialsSemiconductor materials and devices