Magnetoresistance of high mobility HgTe quantum dot films with controlled charging
Menglu Chen, Xinzheng Lan, Margaret H. Hudson, Guohua Shen, P. B. Littlewood, Dmitri V. Talapin, Philippe Guyot‐Sionnest
Abstract
The magnetoresistance of HgTe quantum dot films, exhibiting a well-defined 1S e state charging and a relatively high mobility (1–10 cm 2 V −1 s −1 ), is measured with controlled occupation of the first electronic state.
Topics & Concepts
MagnetoresistanceQuantum dotCondensed matter physicsMaterials scienceElectron mobilityOptoelectronicsPhysicsMagnetic fieldQuantum mechanicsQuantum Dots Synthesis And PropertiesElectronic and Structural Properties of OxidesZnO doping and properties