Complementary Two-Dimensional (2-D) MoS<sub>2</sub> FET Technology
Cristine Jin Estrada, Zichao Ma, Mansun Chan
Abstract
This paper demonstrates complementary 2-D FETs based on molybdenum disulfide, MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> , as the active film. The n-type (n-FET) and p-type (p-FET) characteristics are obtained from undoped and Nb-doped MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> , respectively. We have achieved similar output current drives and high on-off current ratios of more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> for both devices. Based on the proposed MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> FET technology, a complementary metal-oxide-semiconductor (CMOS) inverter circuit with a gain of around 20 and 85% total noise margin at a 3 V supply, is integrated, exhibiting the potential of the proposed technology for thin film applications such as in flexible electronic circuits.