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Beyond 20% World Record Efficiency for Thin-Film Solar Modules

Hossam Elanzeery, Marko Stölzel, Patrick Eraerds, Peter Borowski, Hisham Aboulfadl, Alberto Lomuscio, Detlef Helmecke, Christian Schubbert, Souhaib Oueslati, M. Hála, Julian Röder, Florian Giesl, Thomas Dalibor

2023IEEE Journal of Photovoltaics13 citationsDOIOpen Access PDF

Abstract

We report on crossing the 20% efficiency line for thin-film solar modules. The efficiency of our cadmium-free Cu(In,Ga)(S,Se) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (CIGSSe) mid-sized modules (30 × 30 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) based on the cost-efficient AVANCIS stacked elemental layer – rapid thermal processing absorber process has evolved in the last two years reaching 19.6%, 19.8% and recently we have achieved an efficiency level of 20.3% as independently measured by NREL. The recent improvements were made possible by thorough variations in absorber composition and elemental distribution. The optimization of the absorber thickness, and of the band gap profile through the engineering of sulfur content and gradient at the absorber surface induces an improved absorber quality leading to a distinct increase in the product of short circuit current density and open circuit voltage (J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SC</sub> × V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OC</sub> ). Moreover, improving the absorber homogeneity and adjusting the absorber-buffer interface play an important role in enhancing the fill factor.

Topics & Concepts

Homogeneity (statistics)Materials scienceThermalComputer scienceOptoelectronicsPhysicsAnalytical Chemistry (journal)ChemistryOrganic chemistryThermodynamicsMachine learningChalcogenide Semiconductor Thin Filmssolar cell performance optimizationPerovskite Materials and Applications
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