Direct Growth of Germanene at Interfaces between Van der Waals Materials and Ag(111)
Seiya Suzuki, Takuya Iwasaki, K. Kanishka H. De Silva, Shigeru Suehara, Kenji Watanabe, Takashi Taniguchi, Satoshi Moriyama, Masamichi Yoshimura, Takashi Aizawa, Tomonobu Nakayama
Abstract
Abstract Germanene, a 2D honeycomb germanium crystal, is grown at graphene/Ag(111) and hexagonal boron nitride (h‐BN)/Ag(111) interfaces by segregating germanium atoms. A simple annealing process in N 2 or H 2 /Ar at ambient pressure leads to the formation of germanene, indicating that an ultrahigh‐vacuum condition is not necessary. The grown germanene is stable in air and uniform over the entire area covered with a van der Waals (vdW) material. As an important finding, it is necessary to use a vdW material as a cap layer for the present germanene growth method since the use of an Al 2 O 3 cap layer results in no germanene formation. The present study also proves that Raman spectroscopy in air is a powerful tool for characterizing germanene at the interfaces, which is concluded by multiple analyses including first‐principles density functional theory calculations. The direct growth of h‐BN‐capped germanene on Ag(111), which is demonstrated in the present study, is considered to be a promising technique for the fabrication of future germanene‐based electronic devices.