High-Speed (400MB/s) and Low-BER STT-MRAM Technology for Industrial Applications
S. Ikegawa, K. Nagel, F. B. Mancoff, S. M. Alam, Monika Arora, M. DeHerrera, H. K. Lee, Subir Mukherjee, G. Shimon, J. J. Sun, Iftekhar Rahman, Frederick Neumeyer, Hsuan-Yi Chou, Ch. Tan, Amit Shah, S. Aggarwal
Abstract
We present Everspin’s new spin-transfer torque (STT) MRAM product, with magnetic tunnel junction arrays optimized for low-latency industrial applications, including higher speed, lower error rate, and longer cycling endurance. Performance metrics demonstrated include high-speed functionality with symmetric read and write throughput of an unprecedented 400MB/s over the full operating temperature range from -40°C to +85°C, with sufficient data retention and cycling endurance for industrial applications.
Topics & Concepts
Magnetoresistive random-access memorySpin-transfer torqueTorqueLatency (audio)Tunnel magnetoresistanceComputer scienceElectrical engineeringThroughputData retentionMaterials scienceAutomotive engineeringElectronic engineeringOptoelectronicsRandom access memoryEngineeringComputer hardwareMagnetic fieldMagnetizationPhysicsTelecommunicationsNanotechnologyWirelessQuantum mechanicsThermodynamicsLayer (electronics)Magnetic properties of thin filmsAdvanced Data Storage TechnologiesAdvancements in Semiconductor Devices and Circuit Design