Investigation of All Inorganic Lead‐Free Perovskite CsSnI<sub>3</sub>/Silicon Heterojunction Solar Cell Using SCAPS‐1D
Manoj Kumar, Sushil Kumar
Abstract
Abstract Ab inito investigation of Perovskite/Silicon heterojunction solar cell is performed using SCAPS‐1D. Here, all‐inorganic lead‐free perovskite, CsSnI 3 , is investigated for solar cell with CsSnI 3 /n‐c‐Si configuration and a maximum efficiency of 26.52% is optimized. First, thickness optimization of CsSnI 3 /n‐c‐Si solar cell with Flat‐Band ohmic contact on both sides is performed for CsSnI 3 and n‐c‐Si layers and is optimized to 10 nm for CsSnI 3 and 175 µm for n‐c‐Si with 19.45% efficiency. Subsequently, doping concentration optimization of CsSnI 3 and n‐c‐Si layers has furnished optimum 26.52% efficiency with 4.5 × 10 17 cm −3 of CsSnI 3 and 1.7 × 10 18 cm −3 of n‐c‐Si. Effect of various metal contacts are investigated to find the feasible metal contact among Pt, Au, Al, Ag, and Cu. Pt and Au are found feasible for Front metal contact, whereas Al, Ag, and Cu are found feasible for Back metal contact. Moreover, the impact of CsSnI 3 /n‐c‐Si interface defects on performance parameters is investigated.