Inducing Half-Metallicity in Monolayer MoSi<sub>2</sub>N<sub>4</sub>
Avijeet Ray, Shubham Tyagi, Nirpendra Singh, Udo Schwingenschlögl
Abstract
, respectively, with potential applications in spintronics. We also demonstrate that N and Si vacancies can be used to effectively engineer the work function.
Topics & Concepts
SpintronicsMonolayerMetallicityConduction bandFermi levelCondensed matter physicsMaterials scienceWork functionEnhanced Data Rates for GSM EvolutionMagnetic momentWork (physics)NanotechnologyPhysicsFerromagnetismLayer (electronics)ThermodynamicsElectronNuclear physicsTelecommunicationsStarsAstronomyComputer science2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications