New dielectric constant, due to the impurity size effect, and determined by an effective Bohr model, affecting strongly the Mott criterion in the metal-insulator transition and the optical band gap in degenerate (Si, GaAs, InP)-semiconductors
H. Van Cong
Abstract
impurity size effect, and determined by an effective Bohr model, affecting strongly the Mott criterion in the metal-insulator transition and the optical band gap in degenerate (Si, GaAs, InP)-semiconductors
Topics & Concepts
DielectricCondensed matter physicsImpurityBand gapConstant (computer programming)Bohr modelMetal–insulator transitionMetalMott transitionMaterials sciencePhysicsQuantum mechanicsOptoelectronicsHubbard modelSuperconductivityMetallurgyProgramming languageComputer scienceSurface and Thin Film PhenomenaSemiconductor Quantum Structures and DevicesSemiconductor materials and interfaces