Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V<sub>t</sub> > 0 V and I<sub>on</sub> > 30 µA/µm
Subhali Subhechha, Nouredine Rassoul, A. Belmonte, Hubert Hody, H.F.W. Dekkers, Michiel J. van Setten, A. Chasin, Shamin Houshmand Sharifi, Surajit Sutar, L. Magnarin, Umberto Celano, Harinarayanan Puliyalil, Shreya Kundu, Murat Pak, Lieve Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, Dmitry Batuk, J. Geypen, J. Heijlen, Romain Delhougne, Gouri Sankar Kar
Abstract
To address the requirements of 2T0C 3D-DRAMs, raised source/drain architecture for front-gated amorphous IGZO-TFTs is demonstrated. Record I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> (> 30 µA/µm) with V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</inf> of +0.3 V is achieved with scaled a-IGZO channel and CAAC-IGZO raised contacts along with the oxygen tunnel module. The role of raised contacts on device performance is systematically investigated. We also report ultra-low I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> ~ 4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-19</sup> A/µm for raised contact devices.