Raman Spectroscopic Characterization of Chemical Bonding and Phase Segregation in Tin (Sn)-Incorporated Ga<sub>2</sub>O<sub>3</sub>
Debabrata Das, G. Gutiérrez-Alcaraz, C.V. Ramana
Abstract
High Resolution Image Download MS PowerPoint Slide Using detailed Raman scattering analyses, the effect of tin (Sn) incorporation on the crystal structure, chemical bonding/inhomogeneity, and single-phase versus multiphase formation of gallium oxide (Ga 2 O 3 ) compounds is reported. The Raman characterization of the Sn-mixed Ga 2 O 3 polycrystalline compounds (0.00 ≤ x ≤ 0.30), which were produced by the high-temperature solid-state synthesis method, indicated that the Sn-induced changes in the chemical bonding and phase segregation were significant. Furthermore, the evolution of Sn–O bonds with increasing Sn concentration ( x ) was confirmed. While the monoclinic β-Ga 2 O 3 was unperturbed for lower x values, Raman spectra revealed the nucleation of a composite with a distinct SnO 2 secondary phase. A higher Sn content led to the formation of a Ga–Sn–O + SnO 2 mixed phase compound, which was reflected in shifts in the high-frequency stretching and bending of the GaO 4 tetrahedra that structurally formed the β-Ga 2 O 3 phase. Thus, a chemical composition/phase/chemical bonding correlation was established for the Sn-incorporated Ga 2 O 3 compounds.