Si-Based NIR Tunneling Heterojunction Photodetector With Interfacial Engineering and 3D-Graphene Integration
Zhengyi He, Shan Zhang, Li Zheng, Zhiduo Liu, Guanglin Zhang, Huijuan Wu, Bingkun Wang, Zhongyu Liu, Zhiwen Jin, Gang Wang
Abstract
Here, we have fabricated high-performance near-infrared (NIR) tunnelling heterojunction photodetectors (THPDs) by in-situ synthesizing three-dimensional (3D) graphene on Si with the insertion of a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> tunnelling layer. Combining the high light-harvesting ability of 3D-graphene and the effective dark current suppression of the high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> tunnelling layer, the trade-off between the ultrafast response and ultra-sensitivity in graphene-based PDs is successfully bridged. Our device exhibits ultra-high responsivity (11.2 A/W), excellent specific detectivity ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${5}.{9} \times {10}~^{{10}}$ </tex-math></inline-formula> Jones), and ultra-fast response ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$168~\mu \text{s}$ </tex-math></inline-formula> ) at the communication wavelength (1550 nm). This work provides a universal strategy to fabricate high-performance and low-cost graphene/silicon PDs in the communication wavelength.