The effect of different covalent bond connections and doping on transport properties of planar graphene/MoS<sub>2</sub>/graphene heterojunctions
Wei Li, Jinlei Wei, Baoan Bian, Bin Liao, Guoliang Wang
Abstract
to graphene. Since the three structures all form covalent or ionic bonds, the tunneling barrier for carriers is very small. The C-S structure exhibits a smaller p-type Schottky barrier, indicating that it has better transport properties than the other two structures. We found that the effective doping method can reduce the Schottky-barrier height (SBH), resulting in smaller contact resistance. Thus, the current-voltage curves of the undoped and doped C-S structures exhibit rectification and approximately linear characteristics under a given bias, which agrees with experimental reports. These results provide insight for designing high-performance devices.
Topics & Concepts
GraphenePlanarHeterojunctionCovalent bondDopingMaterials scienceNanotechnologyGraphene nanoribbonsCondensed matter physicsOptoelectronicsChemistryPhysicsOrganic chemistryComputer scienceComputer graphics (images)Graphene research and applications2D Materials and ApplicationsAdvancements in Battery Materials