Wideband Bandpass Filter for 5G Millimeter- Wave Application in 45-nm CMOS Silicon-on-Insulator
Li Gao, Gabriel M. Rebeiz
Abstract
In this letter, a wideband bandpass filter for 5G application is proposed. The filter is implemented in GF 45-nm CMOS SOI (silicon-on-insulator) and is a 4-pole/ 4-zero design which greatly enhance the filter selectivity and out-of-band rejection. Measurements show a filter 3-dB bandwidth of 22-44 GHz, and covers the millimeter-wave 5G 26/28/39 GHz bands. The minimum insertion loss is 1.5 dB with a return loss better than 10 dB and a filter size of 0.07 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The work shows that wideband high-performance filter can be integrated as part of the wideband/multiband RF front-end on CMOS SOI.
Topics & Concepts
WidebandCMOSBand-pass filterSilicon on insulatorInsertion lossExtremely high frequencyBandwidth (computing)Electronic engineeringReturn lossFilter (signal processing)Materials scienceElectrical engineeringOptoelectronicsPhysicsComputer scienceTelecommunicationsEngineeringSiliconAntenna (radio)Microwave Engineering and WaveguidesRadio Frequency Integrated Circuit DesignMillimeter-Wave Propagation and Modeling