Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part II: Physics-Based Modeling
M. Porzani, F. Carletti, Saverio Ricci, Matteo Farronato, Daniele Ielmini
Abstract
Modeling of electrochemical random access memory (ECRAM) is essential to predict device performance and scaling, and provide simulation tools for in-memory computing (IMC) circuits. This article addresses physical modeling of ECRAM capable of describing both the quasistatic characteristics and the pulsed programming dynamics of the device. Channel potentiation and depression are described in terms of nonlinear drift diffusion of mobile oxygen vacancies in the layers of the device. An analytical compact model for pulsed channel potentiation is derived from the physical picture to support circuit simulations. Simulation results are extensively compared with experimental data. The model accounts for device potentiation characteristics and accurately describes second-order effects such as saturation and nonlinearity deviations.