High‐Throughput Atomic Layer Deposition of P‐Type SnO Thin Film Transistors Using Tin(II)bis(tert‐amyloxide)
Alfredo Mameli, James D. Parish, Tamer Dogan, Gerwin H. Gelinck, Michael W. Snook, Andrew J. Straiton, Andrew L. Johnson, Auke Jisk Kronemeijer
Abstract
Abstract Spatial atomic layer deposition (sALD) of p‐type SnO is demonstrated using a novel liquid ALD precursor, tin(II)‐bis(tert‐amyloxide), Sn(TAA) 2 , and H 2 O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA) 2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common‐gate thin film transistors (TFTs), fabricated using sALD with Sn(TAA) 2 result in linear mobilities of up to 0.4 cm 2 V –1 s –1 and on / off‐current ratios, I On / I Off > 10 2 . The combination of enhanced precursor chemistry and improved deposition hardware enables unprecedently high deposition rate ALD of p‐type SnO, representing a significant step toward high‐throughput p‐type TFT fabrication on large area and flexible substrates.