Interface percolation and random trap generation in ferroelectric memory: A two-step degradation mechanism explored through low-frequency noise spectroscopy
Ryun‐Han Koo, Wonjun Shin, Jiseong Im, Seung Whan Kim, Sangwoo Ryu, Gyuweon Jung, Jangsaeng Kim, Sungho Park, Kangwook Choi, Jonghyun Ko, Sung‐Tae Lee, Daewoong Kwon, Jong-Ho Lee
Topics & Concepts
FerroelectricityDegradation (telecommunications)Noise (video)Trap (plumbing)Mechanism (biology)Materials sciencePercolation (cognitive psychology)Interface (matter)Dielectric spectroscopySpectroscopyCondensed matter physicsOptoelectronicsComputer sciencePhysicsComposite materialTelecommunicationsDielectricPsychologyArtificial intelligenceElectrodeImage (mathematics)Capillary numberNeuroscienceQuantum mechanicsMeteorologyCapillary actionElectrochemistryFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing