Trapping and Detrapping Mechanisms in <i>β</i>-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
Elena Fabris, Carlo De Santi, Alessandro Caria, Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Abstract
We present a detailed investigation of the trapping and detrapping mechanisms that take place in the gate region of β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> vertical finFETs and describe the related processes. This analysis is based on combined pulsed characterization, transient measurements, and tests carried out under monochromatic light, with photon energies between 1.5 and 5 eV. The original results presented in this article demonstrate that: (i) when submitted to positive gate stress with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> > 3 V, the devices show a significant threshold voltage variation; (ii) this effect is not recoverable in 10000 s in rest condition (zero bias, dark condition). (iii) VTH can quickly recover its initial value when the device is illuminated with UV-C light at 280 nm. (iv) Stress-recovery experiments carried out at different photon energies allowed us to estimate the threshold energy for the release of carriers from the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interface, and for the injection of electrons from metal to the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> insulator (conduction band discontinuity at the metal/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interface).