Influence of Graded AlGaN sub-channel over the DC and Breakdown characteristics of a T-gated AlGaN/GaN/AlInN MOS-HEMT
V. Sandeep, J. Charles Pravin
Topics & Concepts
Materials scienceBreakdown voltageHigh-electron-mobility transistorTransconductanceOptoelectronicsThreshold voltageTransistorVoltageElectrical engineeringEngineeringGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices