A <i>W</i>-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated Passive Device
Chiao-Yun Hsiao, Chung‐Tse Michael Wu, Chien‐Nan Kuo
Abstract
This work presents an on-chip Wilkinson power divider using silicon-based integrated passive device (IPD) technology that operates from 70 to 110 GHz, thereby covering the entire W-band (75-110 GHz). Based on a simple impedance transformation different from the conventional Wilkinson power divider topology, the proposed silicon IPD power divider with a core size of 0.417 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> can demonstrate power loss of less than 1.1 dB along with input-output return loss better than 14 dB throughout the entire band.
Topics & Concepts
Wilkinson power dividerReturn lossPower dividers and directional couplersInsertion lossTopology (electrical circuits)W bandElectrical engineeringElectrical impedancePower (physics)ChipMonolithic microwave integrated circuitTelecommunicationsPhysicsComputer scienceEngineeringFrequency dividerCMOSAmplifierQuantum mechanicsAntenna (radio)Microwave Engineering and WaveguidesRadio Frequency Integrated Circuit DesignElectromagnetic Compatibility and Noise Suppression