High-Performance Broadband Image Sensing Photodetector Based on MnTe/WS<sub>2</sub> van der Waals Epitaxial Heterostructures
Junxin Yan, Kun Ye, Zhiyan Jia, Zeyu Zhang, Penghui Li, Lixuan Liu, Congpu Mu, He Huang, Yingchun Cheng, Anmin Nie, Jianyong Xiang, Shouguo Wang, Zhongyuan Liu
Abstract
Two-dimensional transition metal dichalcogenide (TMDC) heterostructure is receiving considerable attention due to its novel electronic, optoelectronic, and spintronic devices with design-oriented and functional features. However, direct design and synthesis of high-quality TMDC/MnTe heterostructures remain difficult, which severely impede further investigations of semiconductor/magnetic semiconductor devices. Herein, the synthesis of high-quality vertically stacked WS 2 /MnTe heterostructures is realized via a two-step chemical vapor deposition method. Raman, photoluminescence, and scanning transmission electron microscopy characterizations reveal the high-quality and atomically sharp interfaces of the WS 2 /MnTe heterostructure. WS 2 /MnTe-based van der Waals field effect transistors demonstrate high rectification behavior with rectification ratio up to 10 6, as well as a typical p–n electrical transport characteristic. Notably, the fabricated WS 2 /MnTe photodetector exhibits sensitive and broadband photoresponse ranging from UV to NIR with a maximum responsivity of 1.2 × 10 3 A/W, a high external quantum efficiency of 2.7 × 10 5 %, and fast photoresponse time of ∼50 ms. Moreover, WS 2 /MnTe heterostructure photodetectors possess a broadband image sensing capability at room temperature, suggesting potential applications in next-generation high-performance and broadband image sensing photodetectors.