Performance Comparison for FinFET Nanoscale Static and Domino Logic Circuits
Anjum Riaz, Vijay Kumar Sharma
Abstract
The future prospects of complementary metal oxide semiconductor (CMOS) technology are estimated to be replaced by fin-shaped field effect transistor (FinFET) owing to its strong channel control, high driving capability and ease of fabrication. This paper envisages the effects of voltage, temperature and fin variation on power dissipation and delay for static and domino logic circuits. Circuit behavior becomes unpredictable due to process, voltage and temperature (PVT) variations such as irregular power consumption and performance deviation. It also accelerates circuit deterioration and makes them ineffective. The important circuit level leakage power reduction techniques like LCNT, LECTOR and INDEP have been applied to basic gates, 3-bit carry look ahead adder (CLA) and domino logic circuits at 16 nm FinFET technology. It is found that power delay product (PDP) in CLA using INDEP technique exhibits 61.48% less than conventional CLA. Leakage power reduction techniques have also been verified for the footer domino logic (FDL) circuit and performed Monte Carlo simulations for 10000 samples for reliability analysis. INDEP circuits are robust to PVT variations. The simulations have been completed using Cadence Virtuoso tool.