QUANTUM MECHANICAL STUDY OF THE MAGNETIZATION EFFECT ON THE ELECTRONIC STRUCTURE OF SI: P
Anton Gnidenko, Andrey N. Chibisov, Maria Chibisova, Anastasiya Prohorenko
Abstract
Non-collinear calculation of the electronic structure of silicon doped with phosphorus were performed. The dependence of the energy gap between the donor level and the bottom of the conduction band on the phosphorus atom magnetization is investigate, the possibility of manipulation of the phosphorus atom spin using a magnetic field is shown.
Topics & Concepts
MagnetizationCondensed matter physicsAtom (system on chip)Band gapDopingSiliconPhosphorusConduction bandMaterials scienceSpin (aerodynamics)Magnetic fieldElectronic band structureElectronic structurePhysicsElectronOptoelectronicsQuantum mechanicsMetallurgyThermodynamicsComputer scienceEmbedded systemSemiconductor Quantum Structures and DevicesAdvanced Memory and Neural ComputingThin-Film Transistor Technologies