Revealing Steric‐Hindrance‐Dependent Buried Interface Defect Passivation Mechanism in Efficient and Stable Perovskite Solar Cells with Mitigated Tensile Stress
Qian Zhou, Dongmei He, Qixin Zhuang, Baibai Liu, Ru Li, Hongxiang Li, Zhongying Zhang, Hua Gui Yang, Pengjun Zhao, Yong He, Zhigang Zang, Jiangzhao Chen
Abstract
Abstract Interface engineering is one feasible and effective approach to minimize the interfacial nonradiative recombination stemming from interfacial defects, interfacial residual stress, and interfacial energy level mismatch. Herein, a novel and effective steric‐hindrance‐dependent buried interface defect passivation and stress release strategy is reported, which is implemented by adopting a series of adamantane derivative molecules functionalized with CO (i.e., 2‐adamantanone (AD), 1‐adamantane carboxylic acid (ADCA), and 1‐adamantaneacetic acid (ADAA)) to modify SnO 2 /perovskite interface. All modifiers play a role in passivating interfacial defects, mitigating interfacial strain, and enhancing device performance. The steric hindrance of chemical interaction between CO in these molecules and perovskites as well as SnO 2 is determined by the distance between CO and bulky adamantane ring, which gradually decreases from AD, ADCA, and ADAA. The experimental and theoretical evidences together confirmed steric‐hindrance‐dependent defect passivation effect and interfacial chemical interaction strength. The interfacial chemical interaction strength, defect passivation effect, stress release effect and thus device performance are negatively correlated with steric hindrance. Consequently, the ADAA‐modified device achieves a seductive efficiency up to 23.18%. The unencapsulated devices with ADAA maintain 81% of its initial efficiency after aging at 60 °C for 1000 h.