A multi-fin normally-off <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> vertical transistor with a breakdown voltage exceeding 10 kV
Daiki Wakimoto, Chia-Hung Lin, Kentaro Ema, Yuki Ueda, Hironobu Miyamoto, Kohei Sasaki, Akito Kuramata
Abstract
Abstract We demonstrated a multi-fin normally-off β -Ga 2 O 3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm 2 , and a power figure-of-merit of 0.35 GW cm −2 . The vertical transistor was fabricated on a low-donor-concentration ( N d − N a ≈ 1.8 × 10 15 cm −3 ) and thick (thickness ≈ 85 μ m) epitaxial layer grown on a (011) β -Ga 2 O 3 substrate by halide vapor phase epitaxy to enhance the breakdown voltage. The breakdown voltage exceeding 10 kV is the highest reported for β -Ga 2 O 3 vertical transistors. This result indicates the great potential of Ga 2 O 3 vertical power devices.
Topics & Concepts
Breakdown voltageMaterials scienceOptoelectronicsEpitaxyTransistorStatic induction transistorPower semiconductor deviceSubstrate (aquarium)VoltageLayer (electronics)Avalanche diodeElectric breakdownPower (physics)Vapor phasePhase (matter)Field-effect transistorBipolar junction transistorHigh voltageGa2O3 and related materialsSemiconductor materials and devicesZnO doping and properties