Resistive switching characteristics and theoretical simulation of a Pt/a-Ta2O5/TiN synaptic device for neuromorphic applications
Umbreen Rasheed, Hojeong Ryu, Chandreswar Mahata, R.M. Arif Khalil, Muhammad Imran, Anwar Manzoor Rana, Farhana Kousar, Boram Kim, Yoon Kim, Seongjae Cho, Fayyaz Hussain, Sungjun Kim
Topics & Concepts
TinNeuromorphic engineeringResistive random-access memoryMaterials scienceOptoelectronicsX-ray photoelectron spectroscopyElectrodeMemristorWork functionNon-volatile memoryResistive touchscreenLayer (electronics)NanotechnologyElectronic engineeringElectrical engineeringComputer scienceChemistryNuclear magnetic resonancePhysicsMachine learningEngineeringMetallurgyPhysical chemistryArtificial neural networkAdvanced Memory and Neural ComputingNeuroscience and Neural EngineeringFerroelectric and Negative Capacitance Devices